TEMPERATURE CONVERTER SAFETY MANUAL SIL
... Although a constant failure rate is assumed by the probabilistic estimation this only applies provided that the useful life time of components is not exceeded. Beyond this useful life time, the result of the probabilistic calculation is meaningless as the probability of failure significantly increas ...
... Although a constant failure rate is assumed by the probabilistic estimation this only applies provided that the useful life time of components is not exceeded. Beyond this useful life time, the result of the probabilistic calculation is meaningless as the probability of failure significantly increas ...
DAC2904 数据资料 dataSheet 下载
... The data input ports of the DAC2904 accept a standard positive coding with data bit D13 being the most significant bit (MSB). The converter outputs support a clock rate of up to 125MSPS. The best performance will typically be achieved with a symmetric duty cycle for write and clock; however, the dut ...
... The data input ports of the DAC2904 accept a standard positive coding with data bit D13 being the most significant bit (MSB). The converter outputs support a clock rate of up to 125MSPS. The best performance will typically be achieved with a symmetric duty cycle for write and clock; however, the dut ...
Bonding_20110427_IEEE_September 2013
... Manufactured grounding electrodes are those manufactured and certified to CSA C22.2 No. 41. It is important that in-situ grounding electrodes provide an equivalent surface area contact with earth so as do manufactured electrodes (see CSA C22.2 No. 41). Consideration should also be given to the effec ...
... Manufactured grounding electrodes are those manufactured and certified to CSA C22.2 No. 41. It is important that in-situ grounding electrodes provide an equivalent surface area contact with earth so as do manufactured electrodes (see CSA C22.2 No. 41). Consideration should also be given to the effec ...
AS1363
... If pin EN is connected to GND the AS1363 is disabled. In shutdown mode all internal circuits are turned off, reducing supply current to 30nA typical. For normal operation pin EN must be connected to IN. During shutdown, POK is low. ...
... If pin EN is connected to GND the AS1363 is disabled. In shutdown mode all internal circuits are turned off, reducing supply current to 30nA typical. For normal operation pin EN must be connected to IN. During shutdown, POK is low. ...
TPS75901 数据资料 dataSheet 下载
... above which normal operation is not assured. A system designer must design the operating environment so that the operating junction temperature (TJ) does not exceed the maximum junction temperature (TJmax). The two main environmental variables that a designer can use to improve thermal performance a ...
... above which normal operation is not assured. A system designer must design the operating environment so that the operating junction temperature (TJ) does not exceed the maximum junction temperature (TJmax). The two main environmental variables that a designer can use to improve thermal performance a ...
408-10441
... (for MCP blade contacts) and German/English application specification 114-18021 (for MQS receptacle contacts). Only wire and contacts that meet the requirements of the application specification can be used. Silver-plated contacts must be used in this high-voltage application. DANGER Using contacts h ...
... (for MCP blade contacts) and German/English application specification 114-18021 (for MQS receptacle contacts). Only wire and contacts that meet the requirements of the application specification can be used. Silver-plated contacts must be used in this high-voltage application. DANGER Using contacts h ...
TPS5120 数据资料 dataSheet 下载
... absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V Input voltage: INV1, INV2, CT, PWM/SKIP, REG5V_IN, SOFTSTART1, ...
... absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V Input voltage: INV1, INV2, CT, PWM/SKIP, REG5V_IN, SOFTSTART1, ...
p-n Junction Photocurrent Modelling Evaluation under Optical and Electrical Excitation
... According to Eqn. (6) the generation rate of carriers (U) in the depletion layer width (w) will become maximum when ET → Ei = Eg/2. In addition, since the intrinsic concentration is a function of the energy gap of the material ( ni ∝ e-Eg/kT ), it may be shown that semiconductors with small energy g ...
... According to Eqn. (6) the generation rate of carriers (U) in the depletion layer width (w) will become maximum when ET → Ei = Eg/2. In addition, since the intrinsic concentration is a function of the energy gap of the material ( ni ∝ e-Eg/kT ), it may be shown that semiconductors with small energy g ...
IGBT Tutorial
... For both PT and NPT IGBTs, turn-on switching speed and loss are practically unaffected by temperature. Reverse recovery current in a diode however increases with temperature, so temperature effects of an external diode in the power circuit affect IGBT turn-on loss. For NPT IGBTs, turn-off speed and ...
... For both PT and NPT IGBTs, turn-on switching speed and loss are practically unaffected by temperature. Reverse recovery current in a diode however increases with temperature, so temperature effects of an external diode in the power circuit affect IGBT turn-on loss. For NPT IGBTs, turn-off speed and ...
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... traced back to a simple device, the p–n junction diode. The p–n junction diode is formed when a p-type semiconductor impurity is doped on one side and an n-type impurity is doped on the other side of a single crystal. All the macro effects of electronic devices, i.e., wave shaping, amplifying or ...
... traced back to a simple device, the p–n junction diode. The p–n junction diode is formed when a p-type semiconductor impurity is doped on one side and an n-type impurity is doped on the other side of a single crystal. All the macro effects of electronic devices, i.e., wave shaping, amplifying or ...
Proposed SSR Technology Questions Answers to Proposed Questions
... remain off, but goes into conduction as a result of a sudden change in voltage (e.g.: initial application of line voltage). Commutating dv/dt or turn off dv/dt occurs when the SSR is expected to stop conducting load current but continues to carry load current as a result of a high rate of rise of vo ...
... remain off, but goes into conduction as a result of a sudden change in voltage (e.g.: initial application of line voltage). Commutating dv/dt or turn off dv/dt occurs when the SSR is expected to stop conducting load current but continues to carry load current as a result of a high rate of rise of vo ...
OPA567 Rail-to-Rail I/O, 2A POWER AMPLIFIER DESCRIPTION
... ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ...
... ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ...
MCOTS-C-28-24-HZ-NM - SynQor, Inc.
... The Trim Graph in Figure C shows the relationship between the trim resistor value and Rtrim-up and Rtrim-down, showing the total range the output voltage can be trimmed up or down. Note: The TRIM feature does not affect the voltage at which the output over-voltage protection circuit is triggered. Tr ...
... The Trim Graph in Figure C shows the relationship between the trim resistor value and Rtrim-up and Rtrim-down, showing the total range the output voltage can be trimmed up or down. Note: The TRIM feature does not affect the voltage at which the output over-voltage protection circuit is triggered. Tr ...
LM306 数据资料 dataSheet 下载
... § This typical value is at VCC+ = 12 V, VCC − = − 6 V. NOTE 5: The offset voltages and offset currents given are the maximum values required to drive the output down to the low range (VOL) or up to the high range (VOH). These parameters actually define an error band and take into account the worst-c ...
... § This typical value is at VCC+ = 12 V, VCC − = − 6 V. NOTE 5: The offset voltages and offset currents given are the maximum values required to drive the output down to the low range (VOL) or up to the high range (VOH). These parameters actually define an error band and take into account the worst-c ...
Episode 118 - Teaching Advanced Physics
... ideas to a simple sensor circuit (Part 4). Set them the task of building and testing either an electronic temperature sensor or an electronic light meter (or both). You may feel that the latter experiment as presented is sufficient to introduce the idea of a temperature or light intensity sensor, bu ...
... ideas to a simple sensor circuit (Part 4). Set them the task of building and testing either an electronic temperature sensor or an electronic light meter (or both). You may feel that the latter experiment as presented is sufficient to introduce the idea of a temperature or light intensity sensor, bu ...
LP2950/LP2951 Series of Adjustable Micropower Voltage Regulators Series General Description
... Note 5: Dropout Voltage is defined as the input to output differential at which the output voltage drops 100 mV below its nominal value measured at 1V differential. At very low values of programmed output voltage, the minimum input supply voltage of 2V (2.3V over temperature) must be taken into acco ...
... Note 5: Dropout Voltage is defined as the input to output differential at which the output voltage drops 100 mV below its nominal value measured at 1V differential. At very low values of programmed output voltage, the minimum input supply voltage of 2V (2.3V over temperature) must be taken into acco ...
TPS64200 数据资料 dataSheet 下载
... When delivering low or medium output current, the TPS6420x operate in discontinuous mode. With every switching cycle, the current in the inductor starts at zero, rises to a maximum value and ramps down to zero again. As soon as the current in the inductor drops to zero, ringing occurs at the resonan ...
... When delivering low or medium output current, the TPS6420x operate in discontinuous mode. With every switching cycle, the current in the inductor starts at zero, rises to a maximum value and ramps down to zero again. As soon as the current in the inductor drops to zero, ringing occurs at the resonan ...
Nanogenerator
Nanogenerator is a technology that converts mechanical/thermal energy as produced by small-scale physical change into electricity. Nanogenerator has three typical approaches: piezoelectric, triboelectric, and pyroelectric nanogenerators. Both the piezoelectric and triboelectric nanogenerators can convert the mechanical energy into electricity. However, the pyroelectric nanogenerators can be used to harvest thermal energy from a time-dependent temperature fluctuation.