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E2015020020.doc
E2015020020.doc

... HEMT for high power Application ABSTRACT-- In this paper present, a physics based compact model for the 2-dimensional electron gas (2-DEG) sheet charge density (ns) in AlGaN/GaN High Electron Mobility Transistor is developed by considering AlGaN barrier layer. To obtain the various electrical charac ...
4.1 Writing and Balancing Chemical Equations
4.1 Writing and Balancing Chemical Equations

... used widely in industry for production of a number of commodity and specialty chemicals. Precipitation reactions also play a central role in many chemical analysis techniques, including spot tests used to identify metal ions and gravimetric methods for determining the composition of matter (see the ...
EUP2595  32V Step-Up Converters for Two to Nine White LEDs
EUP2595 32V Step-Up Converters for Two to Nine White LEDs

... The EUP2595 enter shutdown when VCTRL is less than 100mV for more than 8.2ms. In shutdown, supply current is reduced to 0.3µA by powering down the entire IC except for the CTRL voltage-detection circuitry. CCOMP is discharged during shutdown, allowing the device to reinitiate soft-start when it is e ...
Analysis, Design and Control of Zero Current Switching DC To DC
Analysis, Design and Control of Zero Current Switching DC To DC

... battery charging application. This converter can also be used with other low voltage miniature applications. Resonant inductor and capacitor helps to turn on-off the switch at zero current. This reduces switching losses in our conventional converter. In order to determine two (current) zero-cross po ...
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P - Faculty Personal Homepage

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LN2541

Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali  Burak Ozpineci
Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali Burak Ozpineci

... frequency and high temperature operation. Based on the transfer characteristics, the gate drive was designed for a voltage of -30V and a 250 kHz operation was achieved for peak gate currents of 0.8 A. C. Gate drive requirements SiC VJFET switches can be operated at higher switching frequencies and h ...
Activity 1.2.3 Electrical Circuits – Physical Introduction
Activity 1.2.3 Electrical Circuits – Physical Introduction

... Since the late 1800s, engineers have designed systems to utilize electrical energy due to its ability to be converted, stored, transmitted, and reconverted efficiently into other forms of energy. In the 21st century, electrical energy production, distribution, and application have become consumer dr ...
using feedback control and micro-fluidics to steer individual particles
using feedback control and micro-fluidics to steer individual particles

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Summer Assignment: Some Review / Basic Prep

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Introduction to Electricity (EEM 104)

... State the formulas for calculating resistance in a series and parallel circuits. Calculate the resistance in a series circuit. Calculate the resistance in a parallel circuit. State and use Ohm’s Law to calculate voltage, current, and resistance in a series and parallel circuits. State and use Kirchh ...
THERMAL AND SENSITIVITY ANALYSIS OF MULTI-FIN DEVICES Tufts University
THERMAL AND SENSITIVITY ANALYSIS OF MULTI-FIN DEVICES Tufts University

... they, like other ultra-thin body nano devices, have the potential to suffer from significant self heating. We study in this paper self heating in multi-fin devices. We first propose a distributed thermal channel model and validate it using ANSYS. We use this model to study the electro-thermal proper ...
Prezentacja programu PowerPoint
Prezentacja programu PowerPoint

... Recent development of MEMS and sensors technology is essentially based on micromachinig. This technology consists of specific design and fabrication processes, many of which are borrowed from the integrated circuit industry. The important feature of micromachining, leading to manufacturing costs red ...
Task 1: Basic Non-Inverting Amplifier
Task 1: Basic Non-Inverting Amplifier

... Substituting Rf/Rs, which is 24, in the first equation, we can find the value of Rs, which comes out to 0.26667kΩ and therefore, the Rf value comes out to be 6.4kΩ. Using these values, we can achieve the variable-gain amplifier with the desired output voltage range. 2. If the amplitude of the vocals ...
Ionic Compounds
Ionic Compounds

... between the charged particles (the electrons and protons) that compose atoms. • Chemical bonds are classified into two types: – Ionic – Covalent ...
Chapter 3
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... between the charged particles (the electrons and protons) that compose atoms. • Chemical bonds are classified into two types: – Ionic – Covalent ...
RAJALAKSHMI INSTITUTE OF THCHNOLOGY
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... Any circuit with voltage sources, resistances (impedances) and open output terminals can be replaced by a single current source in parallel with single resistance (impedance), where the value of current source is equal to the current passing through the short circuit output terminals and the value o ...
ST. PAUL`S CONVENT SCHOOL METALLIC RAINBOW 金屬彩虹
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... Part II – conducting colorimetry Colorimetry is an analytical method that determines the concentration of a coloured chemical solution by measuring the amount of light it absorbs. The higher the concentration the metal complex ions, the greater the absorbance / colour intensity. Calibration curves a ...
compounds - Belle Vernon Area
compounds - Belle Vernon Area

... between the charged particles (the electrons and protons) that compose atoms. • Chemical bonds are classified into two types: – Ionic – Covalent ...
Hydride ions in oxide hosts hidden by hydroxide ions
Hydride ions in oxide hosts hidden by hydroxide ions

The MOSFET Current Mirror
The MOSFET Current Mirror

Multiple State Electrostatically Formed Nanowire Transistors
Multiple State Electrostatically Formed Nanowire Transistors

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Nanofluidic circuitry



Nanofluidic circuitry is a nanotechnology aiming for control of fluids in nanometer scale. Due to the effect of an electrical double layer within the fluid channel, the behavior of nanofluid is observed to be significantly different compared with its microfluidic counterparts. Its typical characteristic dimensions fall within the range of 1–100 nm. At least one dimension of the structure is in nanoscopic scale. Phenomena of fluids in nano-scale structure are discovered to be of different properties in electrochemistry and fluid dynamics.
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