Photonic Devices II Purpose of the Lab
... are sent on a single fiber) and as reflectors in external cavity of Distributed Bragg Reflector lasers. The basic grating equation is given by: m*λ = gs*(sin θ + sin φm) Where: gs = groove spacing, m = order of the refracted ray, λ = free space wavelength of the incident ray, θ = angle of incidence ...
... are sent on a single fiber) and as reflectors in external cavity of Distributed Bragg Reflector lasers. The basic grating equation is given by: m*λ = gs*(sin θ + sin φm) Where: gs = groove spacing, m = order of the refracted ray, λ = free space wavelength of the incident ray, θ = angle of incidence ...
What are Fiber Optics
... Fiber optics have a large capacity to carry high speed signals over longer distances without repeaters than other types of cables ...
... Fiber optics have a large capacity to carry high speed signals over longer distances without repeaters than other types of cables ...
10 fs ultrafast all-optical switching in polystyrene nonlinear photonic
... All-optical switching has received much attention for a long time due to its potential applications in integrated optics and ultrahigh-speed information processing. Photonic crystal all-optical switching is a promising scheme to realize switching with ultrafast response time.1–6 The refractive index ...
... All-optical switching has received much attention for a long time due to its potential applications in integrated optics and ultrahigh-speed information processing. Photonic crystal all-optical switching is a promising scheme to realize switching with ultrafast response time.1–6 The refractive index ...
A Fast Optical Propagation Technique for Modeling
... tools are designed to include multiple domains and allow efficient system simulation, by modeling components by their functionality rather than their physical construction. Established MEM (micro-electrical-mechanical) systemlevel modeling tools exist, with physical device models being extracted int ...
... tools are designed to include multiple domains and allow efficient system simulation, by modeling components by their functionality rather than their physical construction. Established MEM (micro-electrical-mechanical) systemlevel modeling tools exist, with physical device models being extracted int ...
Stimulated Raman Spectroscopy 1 1. Introduction
... The photoacoustic (PA) effect5-8 is the process of acoustic wave generation in a sample resulting from the absorption of photons. This process was first invented by A. G. Bell, in 18806. Sunlight was focused onto a sample contained in a cell that was connected to a listening tube. When the sunlight ...
... The photoacoustic (PA) effect5-8 is the process of acoustic wave generation in a sample resulting from the absorption of photons. This process was first invented by A. G. Bell, in 18806. Sunlight was focused onto a sample contained in a cell that was connected to a listening tube. When the sunlight ...
Catching the wave - Selected Topics in Quantum Electronics, IEEE
... mode index, and is the spatial period of the EM guide. In order to obtain interaction between the beam and the EM mode, such that synchronism, one could choose an integer , was achieved. Condition (1) is identical to the principle of quasi-phase matching in nonlinear optics [3]. In addition, it was ...
... mode index, and is the spatial period of the EM guide. In order to obtain interaction between the beam and the EM mode, such that synchronism, one could choose an integer , was achieved. Condition (1) is identical to the principle of quasi-phase matching in nonlinear optics [3]. In addition, it was ...
Confinement Factors And Gain In Optical Amplifiers
... guided mode time-averaged power flow across any transverse of the active waveguide. It holds for any cross section guided mode of any two-dimensional waveguide. Note that , i.e., (15) is valid for waveguides with an arbitrary refractive index profile. One possible application lies in checking the ac ...
... guided mode time-averaged power flow across any transverse of the active waveguide. It holds for any cross section guided mode of any two-dimensional waveguide. Note that , i.e., (15) is valid for waveguides with an arbitrary refractive index profile. One possible application lies in checking the ac ...
Monolithic integration of optical waveguide and
... concentrations in the illuminated region while adjacent non-illuminated regions remain thiolene monomer rich (Fig. 3(e)). The rubbery methacrylate matrix allows diffusion of high-index thiol and ene monomers from the monomer-rich regions to the monomer-depleted regions. This in-diffusion of monomer ...
... concentrations in the illuminated region while adjacent non-illuminated regions remain thiolene monomer rich (Fig. 3(e)). The rubbery methacrylate matrix allows diffusion of high-index thiol and ene monomers from the monomer-rich regions to the monomer-depleted regions. This in-diffusion of monomer ...
Refractive Index Measurement within a Photonic Crystal Fibre Based on Short Wavelength Diffraction
... hole spacing, as well as the core size itself, the periodic lattice provides phase conditions that allow coherent scattering of light and therefore diffractive confinement [12]. This resonant phenomenon has been observed in bending loss tests where light leaks out from the core and is launched into ...
... hole spacing, as well as the core size itself, the periodic lattice provides phase conditions that allow coherent scattering of light and therefore diffractive confinement [12]. This resonant phenomenon has been observed in bending loss tests where light leaks out from the core and is launched into ...
Program Overview Erich Ippen
... • Excite 1S→2S transition (known to about 1 part in 1014.) • Lock 486 nm laser to 1S→2S • Excite two-photon transition such as 2S→10S • Measure excitation frequencies with an optical frequency comb, referenced to the 486 nm laser, i.e. referenced to hydrogen ...
... • Excite 1S→2S transition (known to about 1 part in 1014.) • Lock 486 nm laser to 1S→2S • Excite two-photon transition such as 2S→10S • Measure excitation frequencies with an optical frequency comb, referenced to the 486 nm laser, i.e. referenced to hydrogen ...
NEWS RELEASE Redfern Integrated Optics, Inc. Expands Product
... CEO of RIO “The design guarantees no performance degradation as compared to an ORIONTM module of the RIN, linewidth and phase noise over the operating case temperature of 0-70C.” The high-power RIO GRANDE, ideal for sensing, LIDAR, high-resolution metrology and general research and development appli ...
... CEO of RIO “The design guarantees no performance degradation as compared to an ORIONTM module of the RIN, linewidth and phase noise over the operating case temperature of 0-70C.” The high-power RIO GRANDE, ideal for sensing, LIDAR, high-resolution metrology and general research and development appli ...
IOSR Journal of Applied Physics (IOSR-JAP)
... component passes through a detecting aperture that usually can be from 1–3mm in diameter. This light flux passes through a V- filter (555nm peak – 780nm range) and is then detected by a silicon photodiode with amplifier electronic capable of measuring signals spanning several orders of magnitude. Th ...
... component passes through a detecting aperture that usually can be from 1–3mm in diameter. This light flux passes through a V- filter (555nm peak – 780nm range) and is then detected by a silicon photodiode with amplifier electronic capable of measuring signals spanning several orders of magnitude. Th ...
Film Screen Q & A
... the addition of starter to the developer replenishment tank, which may not result in optimum processing of film. It does not involve daily draining. ...
... the addition of starter to the developer replenishment tank, which may not result in optimum processing of film. It does not involve daily draining. ...
VENUE1，SESSION 1, 9:00 to 11:00，
... nanoscale ultrathin films Abstract: The author demonstrates the drastic effect of film thickness on the local order of Ge sites in amorphous GeTe (a-GeTe) thin films by Surface Enhanced Raman scattering study. The relative intensity of the two prominent peaks around 125cm-1 and 160cm-1 changes great ...
... nanoscale ultrathin films Abstract: The author demonstrates the drastic effect of film thickness on the local order of Ge sites in amorphous GeTe (a-GeTe) thin films by Surface Enhanced Raman scattering study. The relative intensity of the two prominent peaks around 125cm-1 and 160cm-1 changes great ...
Athermal laser design
... cavity length itself would grow considerably as the effective grating length, Leff, would become significant to the total cavity length. This is important as dLeff/dT is proportional to the grating length Lg as shown in Eq. (5) where δ is simply the difference in effective indices of the two periodi ...
... cavity length itself would grow considerably as the effective grating length, Leff, would become significant to the total cavity length. This is important as dLeff/dT is proportional to the grating length Lg as shown in Eq. (5) where δ is simply the difference in effective indices of the two periodi ...
Slide 1
... Abstract: Acousto-optic (AO) imaging is a new dual-wave modality that combines ultrasound with diffuse light to achieve deep-tissue imaging of optical properties with the spatial resolution of ultrasound. In this technique, the sample is simultaneously insonified by an ultrasound beam and illuminate ...
... Abstract: Acousto-optic (AO) imaging is a new dual-wave modality that combines ultrasound with diffuse light to achieve deep-tissue imaging of optical properties with the spatial resolution of ultrasound. In this technique, the sample is simultaneously insonified by an ultrasound beam and illuminate ...
Silicon photonics
Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. Consequently, silicon photonics is being actively researched by many electronics manufacturers including IBM and Intel, as well as by academic research groups such as that of Prof. Michal Lipson, who see it is a means for keeping on track with Moore's Law, by using optical interconnects to provide faster data transfer both between and within microchips.The propagation of light through silicon devices is governed by a range of nonlinear optical phenomena including the Kerr effect, the Raman effect, two photon absorption and interactions between photons and free charge carriers. The presence of nonlinearity is of fundamental importance, as it enables light to interact with light, thus permitting applications such as wavelength conversion and all-optical signal routing, in addition to the passive transmission of light.Silicon waveguides are also of great academic interest, due to their ability to support exotic nonlinear optical phenomena such as soliton propagation.