![Lasers-An Overview](http://s1.studyres.com/store/data/014687271_1-0c2b5792535db738241ec76d5a81ac07-300x300.png)
Lasers-An Overview
... Chemical : Some lasers require hazardous or toxic substances to operate (i.e., chemical dye, Excimer lasers). Electrical : Most lasers utilize high voltages that can be lethal. Fire : Solvents used in dye lasers are flammable. High voltage pulse or flash lamps may cause ignition. ...
... Chemical : Some lasers require hazardous or toxic substances to operate (i.e., chemical dye, Excimer lasers). Electrical : Most lasers utilize high voltages that can be lethal. Fire : Solvents used in dye lasers are flammable. High voltage pulse or flash lamps may cause ignition. ...
Acousto-Optic Devices and Applications
... where L 5 V / f is the acoustic wavelength, and V and f are the velocity and frequency of the acoustic wave. In Eq. (22), the small optical frequency difference (due to acoustic frequency shift) of the incident and diffracted light beams are neglected. Isotropic Diffractions . Consider first the cas ...
... where L 5 V / f is the acoustic wavelength, and V and f are the velocity and frequency of the acoustic wave. In Eq. (22), the small optical frequency difference (due to acoustic frequency shift) of the incident and diffracted light beams are neglected. Isotropic Diffractions . Consider first the cas ...
Visibility study of graphene multilayer structures Guoquan Teo and
... substrates: quartz and NiFe (60 nm) coated Si wafer. The graphite flakes obtained by mechanical exfoliation were transferred to the substrates which include SLG, BLG and FLG sheets. Subsequently, the contrast and Raman spectra were measured to identify SLG and BLG sheets. After that, a thin layer (~ ...
... substrates: quartz and NiFe (60 nm) coated Si wafer. The graphite flakes obtained by mechanical exfoliation were transferred to the substrates which include SLG, BLG and FLG sheets. Subsequently, the contrast and Raman spectra were measured to identify SLG and BLG sheets. After that, a thin layer (~ ...
Semiconductor Lasers Using Diffused Quantum
... AlGaAs barriers, respectively. Therefore, interdiffusion occurs at the interface of the QW heterostructure. Consequently, the shape of QW is distorted, resulting in widening of material bandgap and reduction of refractive index. Furthermore, the gain and the absorption spectra are also changed [25], ...
... AlGaAs barriers, respectively. Therefore, interdiffusion occurs at the interface of the QW heterostructure. Consequently, the shape of QW is distorted, resulting in widening of material bandgap and reduction of refractive index. Furthermore, the gain and the absorption spectra are also changed [25], ...
A Study of the Phenomenon of Spontaneous Parametric Down
... 3 × 3 × 5 mm which split the photon beam into a pair of entangled photon beams having wavelengths 810 nm each. A half-waveplate was used to vertically polarize the incident pump beam. For normal incidence of the pump beam on the crystal, as in our experiment, the twin photons split at a half angle o ...
... 3 × 3 × 5 mm which split the photon beam into a pair of entangled photon beams having wavelengths 810 nm each. A half-waveplate was used to vertically polarize the incident pump beam. For normal incidence of the pump beam on the crystal, as in our experiment, the twin photons split at a half angle o ...
IOSR Journal of Humanities and Social Science (JHSS)
... Fig. 7: shows the preliminary result of the first optical design, Shows the waves of Laser light as a result of the much interference, which is going through the radiation [27]. ...
... Fig. 7: shows the preliminary result of the first optical design, Shows the waves of Laser light as a result of the much interference, which is going through the radiation [27]. ...
Superluminal ring laser for hypersensitive sensing H. N. Yum, M. Salit,
... frequency and L is the length of the cavity. In general, SWLC ≡ ξ SEC where SEC is the sensitivity of the empty cavity, and SWLC is that of the WLC. Under ideal conditions, ξ = 1/ng, where ng is the group index. For vanishing ng, the value of ξ diverges. However, higher order non-linearities within ...
... frequency and L is the length of the cavity. In general, SWLC ≡ ξ SEC where SEC is the sensitivity of the empty cavity, and SWLC is that of the WLC. Under ideal conditions, ξ = 1/ng, where ng is the group index. For vanishing ng, the value of ξ diverges. However, higher order non-linearities within ...
Analytic design method for optimal imaging: coupling three ray sets
... predefined characteristics. Where unrestricted means that the optical surfaces can have any shape to fulfill all imposed requirements. Such an approach can help to reduce the needed number of optical elements to a minimum or offer a way to design very compact optical systems. A basic example of such ...
... predefined characteristics. Where unrestricted means that the optical surfaces can have any shape to fulfill all imposed requirements. Such an approach can help to reduce the needed number of optical elements to a minimum or offer a way to design very compact optical systems. A basic example of such ...
Aalborg Universitet Transfer function and near-field detection of evanescent waves
... geometry of the refractive index profile is depicted in Fig. 5. The core and cladding indices of the fiber are 1.459 and 1.457, respectively; the core diameter is 4 m, and, to increase computation speed, a reduced cladding diameter of 20 m was chosen. The opening angles were varied from 10° to 70° ...
... geometry of the refractive index profile is depicted in Fig. 5. The core and cladding indices of the fiber are 1.459 and 1.457, respectively; the core diameter is 4 m, and, to increase computation speed, a reduced cladding diameter of 20 m was chosen. The opening angles were varied from 10° to 70° ...
74, 042316 (2006)
... a +-polarized laser that drives the 5S → 6P transition 关18兴 to obtain a small diffraction limit 关Fig. 1共a兲兴. The laser induces a red-detuned trap for state 兩0典, but a blue-detuned trap for state 兩1典. The wavelength f ⬇ 421 nm 共i.e., the detuning ⌬0兲 is optimized to obtain the maximal ratio betwee ...
... a +-polarized laser that drives the 5S → 6P transition 关18兴 to obtain a small diffraction limit 关Fig. 1共a兲兴. The laser induces a red-detuned trap for state 兩0典, but a blue-detuned trap for state 兩1典. The wavelength f ⬇ 421 nm 共i.e., the detuning ⌬0兲 is optimized to obtain the maximal ratio betwee ...
Design and Analysis of Integrated Optical Waveguide Structures and
... etching (RIE) with an Aluminum (Al) mask were developed and lead to well fabricated optical devices in the (sub)micrometer range. The usage of focused ion beam (FIB) milling is invented for smoother front faces which were analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AF ...
... etching (RIE) with an Aluminum (Al) mask were developed and lead to well fabricated optical devices in the (sub)micrometer range. The usage of focused ion beam (FIB) milling is invented for smoother front faces which were analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AF ...
Silicon photonics
Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. Consequently, silicon photonics is being actively researched by many electronics manufacturers including IBM and Intel, as well as by academic research groups such as that of Prof. Michal Lipson, who see it is a means for keeping on track with Moore's Law, by using optical interconnects to provide faster data transfer both between and within microchips.The propagation of light through silicon devices is governed by a range of nonlinear optical phenomena including the Kerr effect, the Raman effect, two photon absorption and interactions between photons and free charge carriers. The presence of nonlinearity is of fundamental importance, as it enables light to interact with light, thus permitting applications such as wavelength conversion and all-optical signal routing, in addition to the passive transmission of light.Silicon waveguides are also of great academic interest, due to their ability to support exotic nonlinear optical phenomena such as soliton propagation.