J.M. Rivas, J. Shafran, R.S. Wahby, and D.J. Perreault, New Architectures for Radio-Frequency dc-dc Power Conversion, IEEE Transactions on Power Electronics , Vol. 21, No. 2, March 2006, pp. 380-393.
J.C. Sturm, Y. Huang, L. Han, T. Liu, B. Hekmatshoar, K. Cherenack, E. Lausecker, and S. Wagner, "Amorphous Silicon: The Other Silicon," Ultimate Integration on Silicon (ULIS) 2011, Cork, Ireland MARCH (2011)
J.C. Sturm, S. Avasthi, K.A. Nagamatsu, J. Jhaveri, W.E. McClain, G. Man, A. Kahn, J. Schwartz, S. Wagner, "Wide Bandgap Heterojunctions on Crystalline Silicon", ECS Trans. 58, pp. 97-105 (2013)
J.C. Sturm, B. Hekmatshoar, K. Cherenack and S. Wagner, "Amorphous Silicon TFT's with 100-year Lifetimes in a Clear Plastic Compatible Process for AMOLEDs," SID 09 Digest, pp. 979-982, JUNE (2009)t, pp. 597-599, JUNE (2009)
J. T. - Empire Hard Chrome
J. Smajo, M. Smajo and D. Vukadinovic
J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, and J.C. Sturm, "A Full-wave Bridge Rectifier Based on Thin-film Amorphous-silicon Schottky Diodes for Wireless Power and Signal Transfer in Systems-on-plastic", MRS Meeting (APR 2012).
J. Park , G. Morgenthal , K. Kim
J. Lu, D.J. Perreault and K.L. Afridi, “Impedance Control Network Resonant Converter for Wide-Range High-Efficiency Operation,” 2015 IEEE Applied Power Electronics Conference , pp. 1440-1447, March 2015.
J. J. Thomson Determined the charge to mass ratio
J. Hu, A.D. Sagneri, J.M. Rivas, Y. Han, S.M. Davis, and D.J. Perreault, “High-Frequency Resonant SEPIC Converter with Wide Input and Output Voltage Ranges, 2008 IEEE Power Electronics Specialists Conference , June 2008, pp. 1397 – 1406
J. Hu, A.D. Sagneri, J.M. Rivas, Y. Han, S.M. Davis, and D.J. Perreault, “High-Frequency Resonant SEPIC Converter with Wide Input and Output Voltage Ranges,” IEEE Transactions on Power Electronics , Vol. 27, No. 1, pp. 189-200, Jan. 2012.
J. Burkhart, R. Korsunsky, and D.J. Perreault, “Design Methodology for a Very High Frequency Resonant Boost Converter,” IEEE Transactions on Power Electronics , Vol. 28, No. 4, pp. 1929-1937, April 2013.
J-FET (Junction Field Effect Transistor)
j hnson - Neuhold Elektronik
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