Download US5L12

US5L12
Transistors
General purpose transistor
(isolated transistor and diode)
US5L12
A 2SD2675 and a RB461F are housed independently in a TUMT5 package.
zExternal dimensions (Unit : mm)
(1)
(5)
0.2
zFeatures
1) Tr : Low VCE(sat)
Di : Low VF
2) Small package
1.7
0~0.1
0.17
ROHM :TUMT5
1.3
0.2
1pin mark
0.77
2.1
2.0
(2)
0.65 0.65
(3)
0.3
(4)
0.85Max.
zApplications
DC / DC converter
Motor driver
0.15Max.
Abbreviated symbol : L12
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
zEquivalent circuit
(5)
(4)
Di2
Tr1
(1)
(2)
(3)
zPackaging specifications
Type
US5L12
Package
TUMT5
Marking
Code
L12
Basic ordering unit(pieces)
3000
TR
Rev.A
1/4
US5L12
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Collector current
ICP
Power dissipation
Pc
Junction temperature
Tj
Range of storage temperature
Tstg
Unit
V
V
V
A
∗1
A
W/ELEMENT ∗2
°C
°C
Limits
30
30
6
1
2
0.7
150
−40 to +125
∗1 Single pulse, Pw=1ms.
∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
Di2
Limits
Parameter
Symbol
Peak reverse voltage
VRM
25
Reverse voltage (DC)
20
VR
Average rectified forward current
700
IF
Forward current surge peak (60HZ, 1∞) IFSM
3
Power dissipation
PD
0.5
Junction temperature
Tj
125
Range of storage temperature
Tstg
−40 to +125
Unit
V
V
mA
A
W/ELEMENT
°C
°C
∗
∗ Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
Tr1& Di2
Parameter
Symbol
Total power dissipation
Limits
0.4
1.0
PD
Unit
W/TOTAL
W/TOTAL
∗1
∗2
∗1 Each terminal mounted on a recommended land
∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
30
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
120
−
320
7
Max.
−
−
−
100
100
350
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=30V
VEB=6V
IC=500mA, IB=25mA
VCE=2V, IC=100mA ∗
VCE=2V, IE=100mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
∗
∗ Pulsed
Di2
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
Reverse current
Parameter
VF
IR
−
−
450
−
490
200
mV
µA
IF=700mA
VR=20V
Conditions
Reverse recovery time
trr
−
9
−
ns
IF=IR=100mA, Irr=0.1IR
Rev.A
2/4
US5L12
Transistors
zElectrical characteristic curves
Ta=Š40˚C
100
VCE=2V
Pulsed
10
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
COLLECTOR CURRENT : IC (A)
1
VCE=2V
Pulsed
Ta=25˚C
0.1
Ta= 100˚C
Ta=−40˚C
0.01
0.001
0
1.0
1.5
0.5
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.4 Grounded emitter propagation
characteristics
=20/1
IC/IB=20
Pulsed
VBE(sat)
1
Ta=Š40˚C
Ta=25˚C
Ta=100˚C
Ta=100˚C
0.1
VCE(sat)
Ta=25˚C
Ta=Š40˚C
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=25˚C
10
10
Ta=25˚C
VCE=2V
1
0.1
IC/IB=50/1
IC/IB=20/1
0.01
IC/IB=10/1
0.001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
1000
tstg
SWITCHING TIME : (ns)
DC CURRENT GAIN : hFE
Ta=100˚C
TRANSITION FREQUENCY : fT (MHz)
1000
BASE SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Tr1
100
10
0.01
Fig.5 Gain bandwidth product
vs. emitter current
100
tf
tr
10
Ta=25˚C
VCE=5V
IC/IB=20/1
VCE=2V
Ta=25˚C
f=100MHz
0.1
EMITTER CURRENT : IE (A)
tdon
1
1
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.6 Switching time
100
Cib
I =0A
f 1MHz
Ta=25˚C
=
Cob
10
1
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
3/4
US5L12
Transistors
Di2
1000m
REVERSE CURRENT : IR (A)
100m
1
100m
5˚
C
C
10m
1m
Ta
=−
25
˚C
2
=1
Ta
Ta
=2
5˚
FORWARD CURRENT : IF (A)
10
Ta=125˚C
10m
1m
100µ
Ta=25˚C
10µ
Ta=−25˚C
1µ
0.1m
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1µ
0
10
20
30
40
50
60
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
Fig.8 Forward characteristics
Fig.9 Reverse characteristics
70
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1