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Transcript
π‘Ÿπ‘‘ =
π‘˜π‘‡
π‘žπΌπ·πΆ
Noise current density, In
∴ π‘‰π‘›π‘œπ‘–π‘ π‘’(π‘Ÿπ‘šπ‘ )π‘ β„Žπ‘œπ‘‘ = πΌπ‘›π‘œπ‘–π‘ π‘’(π‘Ÿπ‘šπ‘ ) π‘Ÿπ‘‘
Noise power density, Vn2
πΌπ‘›π‘œπ‘–π‘ π‘’(π‘Ÿπ‘šπ‘ ) = √2π‘žπΌπ·πΆ 𝐡
= 𝐼𝑛 √𝐡
Also white noise
π‘‰π‘›π‘œπ‘–π‘ π‘’(π‘Ÿπ‘šπ‘ )π‘‘π‘œπ‘‘π‘Žπ‘™ = βˆšπ‘‰π‘›π‘œπ‘–π‘ π‘’(π‘Ÿπ‘šπ‘ )1 2 + π‘‰π‘›π‘œπ‘–π‘ π‘’(π‘Ÿπ‘šπ‘ )2 2
𝑅𝐺 = [𝑅1 βˆ₯ 𝑅2 ]
Where Vn is rms noise in
1Hz (noise density)
Shot noise
π‘‰π‘›π‘œπ‘–π‘ π‘’(π‘Ÿπ‘šπ‘ ) = √4π‘˜π‘‡π΅π‘…
= 𝑉𝑛 √𝐡
No dependence on
Thermal/Johnson
frequency  white noise
RD
R1
Rsig
1
1
πœ”1 =
β‰…
𝐢1 (𝑅𝑠𝑖𝑔 + 𝑅𝐺 ) 𝐢1 𝑅𝐺
VS
1
𝐢2 (𝑅𝐿 + 𝑅𝑇𝐻 )
= [π‘Ÿπ‘œ βˆ₯ 𝑅𝐷 ]
πœ”2 =
Vdd
𝑅𝑇𝐻
C2
Vout
C1
R2
RS
CS
RL
Burst (β€œpopcorn”) noise
Flicker noise (1/f)
Also LF noise
𝑖(π‘Ÿπ‘šπ‘ )π‘π‘’π‘Ÿπ‘ π‘‘ =
π‘Ÿπ‘‘π‘  =
1
π‘”π‘š
√
𝐾2
𝑖(π‘Ÿπ‘šπ‘ )π‘“π‘™π‘–π‘π‘˜π‘’π‘Ÿ
rds2
πΌπ‘Ž
= √𝐾1 𝑏 √𝐡
𝑓
1 + π‘”π‘š 𝑅𝑆
πœ”π‘†1
=
𝐢𝑆 𝑅𝑆
𝐢𝑆 𝑅𝑆
Combining
above graphs:
For Ο‰S0<Ο‰1
For Ο‰S0>Ο‰1
LF noise
1
Hence AV set by 𝐴𝑉 = βˆ’π‘”π‘š1 [π‘Ÿπ‘œ1 βˆ₯
]
π‘”π‘š2
transistor size
π‘”π‘š1
and is
=βˆ’
π‘”π‘š2
independent of
bias circuit
(π‘Š/𝐿)1
=√
(π‘Š/𝐿)2
Gate-drain connected load
i.e. diode connected
LF MOSFET
performance
dictated by C1,
C2 and CS
𝐼𝑐
√𝐡
𝑓 2
1+( )
𝑓𝑐
πœ”π‘†0 =
Emitter coupled transistors
responds only to different
signals VO2 VO2
Uses transistor in active
region as a load to maintain
gain and have low power
Common mode input, VCM = Vi1 = Vi2
Before:
𝐴𝐢𝑀1 β‰… βˆ’
After:
𝐴𝑉 = βˆ’π‘”π‘š1 [π‘Ÿπ‘œ1 βˆ₯ π‘Ÿπ‘œ2 ]
𝐼𝐢 = πΌπ‘Ÿπ‘’π‘“ =
𝑅𝐢
2𝑅𝐸𝐸
REE is the current source
small signal resistance
Keep low
𝑉𝐢𝐢 βˆ’ 𝑉𝐡𝐸
𝑅
Input common mode resistance,
π‘…π‘–π‘π‘š = π‘Ÿπœ‹ + 2𝑅𝐸𝐸 (1 + π‘”π‘š π‘Ÿπœ‹ )
(Same applies to FETs)
If Io1 through Q1 has W/L, then
Io2 = 2Io1 for Q2 that has 2W/L
(half the current, half the
area)
Cascode π‘…π‘œπ‘’π‘‘ β‰… (1 + π‘”π‘š π‘Ÿπ‘œ2 )π‘Ÿπ‘œ3
 massive CMRR
Differential mode
input, Vi1 = - Vi2
Currents can be set by adjusting W/L
ratio – can replace Rs with MOS Qs
MOS cascode current
sources increase Rout
Differential gain, Ad = 2Ad1
Transistor biased in active region
However, decreased Rout
 emitter degeneration
2. Wilson current mirror
πΌπ‘Ÿπ‘’π‘“
πΌπ‘œπ‘’π‘‘ β‰…
2
1+
𝛽
ro effect decreased (Rout
increased)
Single ended differential gain, 𝐴𝑑1 =
βˆ’π‘”π‘š1 𝑅𝐢
BJT and FETs require large resistances
Solutions:
3. Widlar current source
Current mirror with RE on
transistor 2 emitter
Keep high
Figure of merit for op-amp, Common Mode
Rejection Ratio,
𝐴𝑑
𝐢𝑀𝑅𝑅 =
= π‘”π‘š 𝑅𝐸𝐸 ≫ 10000(= 80𝑑𝐡)
𝐴𝐢𝑀
1. Current mirror
πΌπ‘œπ‘’π‘‘ =
πΌπ‘Ÿπ‘’π‘“
𝑉𝐢𝐸
(1 +
)
2
𝑉𝐴
1+
𝛽
Due to finite Ξ²
2
Input differential
resistance, 𝑅𝑖𝑑 =
2π‘Ÿπœ‹
2
πΌπ‘Ÿπ‘’π‘“ = πΌπ‘œπ‘’π‘‘ (1 + )
𝛽
Due to finite ro
If Ξ² and ro = ∞  Iout = Iref