Download MDM750H65E2

DIODE MODULE
Spec.No.SR2-SP-09003 R4
MDM750H65E2
FEATURES
 Low noise recovery: Ultra soft fast recovery diode.
 High reverse recovery capability:
Super HiRC Structure.
 High reliability, high durability diodes.
 Isolated heat sink (terminal to base).
CIRCUIT DIAGRAM
C(K)
C(K)
E(A)
E(A)
o
ABSOLUTE MAXIMUM RATINGS (Tc=25 C)
Item
Symbol
Unit
MDM750H65E2
o
Tj=125 C
Repetitive Peak Reverse
o
Tj=25 C
Voltage
o
Tj=-40 C
DC
Forward Current
1ms
Junction Temperature
Storage Temperature
Terminals-base
Isolation Test
Voltage
Terminal 1-Terminal 2
Terminals (M8)
Screw Torque
Mounting (M6)
Notes: (1) Recommended Value 91N·m
VRRM
IF
IFM
Tj
Tstg
VISO
VISO T-T
-
Forward Voltage Drop
Reverse Recovery Time
Reverse Recovery Loss
A
o
C
C
o
VRMS
N·m
(2) Recommended Value 5.50.5N·m
ELECTRICAL CHARECTERISTICS
Item
Symbol Unit
Repetitive Reverse Current
6,500
6,500
6,000
750
1500
-40 ～ +125
-50 ～ +125
10,200 (AC 1 minute)
10,200 (AC 1 minute)
10
(1)
6
(2)
V
IRRM
mA
VF
V
trr
Err(10%)
Err(full)
s
J/P
J/P
PACKAGE CHARECTERISTICS
Item
Symbol Unit
Min. Typ. Max.
3.75
-
10
3.8
4.15
0.8
2.4
2.6
75
4.65
1.6
3.0
-
Test Conditions
o
VAK=6,500V, Tj=125 C
o
IF=750A, Tj=25 C
o
IF=750A, Tj=125 C
VCC=3,600V, IF=750A, L=200nH
o
Tj=125 C Rg=8.2 (3)
Min. Typ. Max.
Terminal Resistance
Terminal Stray Inductance
RCE
LsCE
m
nH
-
0.3
42
Thermal Impedance
Comparative tracking index
Rth(j-c)
CTI
K/W
-
600
Contact Thermal Impedance
Rth(c-f)
K/W
-
-
Test Conditions
per arm
per arm
0.017 Junction to case
Case to fin (grease=1W/(m･K),
0.007
Heat-sink flatness 50um)
Notes:(3) Counter arm; MBN750H65E2 VGE=+/-15V
RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
P1
DIODE MODULE
Spec.No.SR2-SP-09003 R4
MDM750H65E2
Ls
DUT
LLOAD
Vcc
Rg
G/D
MBN750H65E2
Fig.1 Switching test circuit
Ic
Vce
Ls=
VL
( dIc
dｔ )t=t
L
t
0
VL
tL
Fig.2 Definition of stray inductance
Vce
0.1Vce
Irm
0.5Irm
0.1IF
0
t
trr
IF
-Ic
t3
t1
t2 t4
t2
Err(10%)=
∫ IF･Vce dt
t1
t4
Err(Full)=
∫ IF･Vce dt
t3
Fig.3 Definition of switching loss
P2
DIODE MODULE
Spec.No.SR2-SP-09003 R4
P3
MDM750H65E2
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
6
1500
TYPICAL
【Conditions】
TYPICAL
VGE=±15V、IF=750A
Vcc=3600V、Ls≒200nH、Tj=125℃
Inductive load
Vce
0.1Vce
5
Irm
Tj=25oC
0.5Irm
0.1IF
0
t
trr
IF
Reverse Recovery Loss , Err (J/pulse)
-Ic
Tj=125oC
Forward Curent , IF (A)
1000
500
t9
4
t11
t12 t10
t12
Err(10%)=
∫ IF･Vce dt
t11
t10
Err(Full)=∫ IF･Vce dt
t9
3
Err(full)
Err(10%)
2
1
0
0
0
1
2
3
4
5
6
7
8
0
5
10
Forward Voltage, VF(V)
15
20
25
Gate Resistance, RG (Ω)
Recovery Loss vs.Gate Resistance
6
2
【Conditions】
Irm
1.8
0
t
-Ic
t9
t11
Reverse Recovery Time, trr (μs)
Reverse Recovery Loss , Err (J/pulse)
trr
IF
-Ic
t12 t10
t12
4
0.5Irm
0.1IF
0
1.6
t
trr
IF
Vce
0.1Vce
Irm
0.5Irm
0.1IF
TYPICAL
VGE=±15V、Rg(on)=8.2Ω
Vcc=3600V、Ls≒200nH、Tj=125℃
Inductive load
Vce
0.1Vce
5
【Conditions】
TYPICAL
VGE=±15V、Rg(on)=8.2Ω
Vcc=3600V、Ls≒200nH、Tj=125℃
Inductive load
Err(10%)=∫ IF･Vce dt
Err(full)
t11
t10
Err(Full)=
∫ IF･Vce dt
t9
3
Err(10%)
2
t9
1.4
t11
t12 t10
t12
Err(10%)=∫ IF･Vce dt
t11
t10
1.2
Err(Full)=
∫ IF･Vce dt
t9
1
0.8
0.6
0.4
1
0.2
0
0
0
250
500
750
1,000
1,250
Forward Current , IF(A)
Recovery Loss vs.Forward Current
1,500
0
250
500
750
1,000
1,250
1,500
Forward Current , IF(A)
Reverse Recovery Time vs.Forward Current
DIODE MODULE
Spec.No.SR2-SP-09003 R4
MDM750H65E2
RecSOA
Conditions:
Ls200nH, Vcc4400V, IF1500A, VGE=-15V,
Rg(on) of across IGBT , VGE of across IGBT =±15V,
-40oCTc125oC, Conduction pulse width of diode 30s
1600
1400
1200
-IF [A]
1000
800
600
400
200
0
0
1000
2000
3000
4000
5000
6000
7000
Anode-cathode voltage [V](at chip level)
RecSOA
TRANSIENT THERMAL IMPEDANCE
Transient thermal impedance : Zth(j-c) [K/W]
Maximum Value
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
Time : t [s]
Transient Thermal Impedance Curve
10
P4
DIODE MODULE
Spec.No.SR2-SP-09003 R4
MDM750H65E2
48.5+1.0/-0.5
OUTLINE DRAWING
Unit in mm
Weight: 1050(g)
Material declaration
Please note the following materials are contained in the product,
in order to keep product characteristic and reliability level.
Material
Contained part
Lead (Pb) and its compounds
Solder
P5
DIODE MODULE
Spec.No.SR2-SP-09003 R4
P6
MDM750H65E2
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi Power Semiconductor Device, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
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and safety not are they to be applied to that purpose by their direct purchasers or any
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
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