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M3P100A-80 thru M3P100A-160
Three Phase Silicon
Bridge Rectifier
VRRM = 800 V - 1600 V
IF = 100 A
Features
• High Surge Capability
• Types up to 1600 V VRRM
Three Phase Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
M3P100A-80
M3P100A-160
Unit
Repetitive peak reverse voltage
VRRM
800
1600
V
Non-repetitive peak reverse voltage
VRSM
880
1700
V
IF
TC ≤ 103 °C
100
100
A
Surge non-repetitive forward current,
Half Sine Wave
IFSM
TC = 25 °C, tp = 8.3 ms
1200
1200
A
I2 t
Operating temperature
Storage temperature
I2 t
Tj
Tstg
6000
-55 to 150
-55 to 150
6000
-55 to 150
-55 to 150
A2 S
°C
°C
Conditions
M3P100A-80
M3P100A-160
Unit
IF = 100 A, Tj = 25 °C
VR = VRRM, Tj = 150 °C
1.15
10
1.15
10
V
mA
0.22
0.22
°C/W
Continuous forward current
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
Reverse current
VF
Thermal characteristics
Thermal resistance, junction - case
Feb 2016
RthJC
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
M3P100A-80 thru M3P100A-160
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
M3P100A-80 thru M3P100A-160
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3