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Agilent CNY17-x
Phototransistor Optocoupler
High Collector-Emitter
Voltage Type
Data Sheet
Description
The CNY17 contains a light emitting
diode optically coupled to a phototransistor. It is packaged in a 6-pin
DIP package and available in widelead spacing option and lead bend
SMD option. Collector-emitter
voltage is above 70 V. Response
time, tr, is typically 5 µs and
minimum CTR is 40% at input
current of 10 mA.
Ordering Information
Specify part number followed by
Option Number (if desired).
CNY17-3-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
6
5
Schematic
4
ANODE
1
IF
6
+
BASE
VF
CATHODE
1
1. ANODE
2. CATHODE
3. NC
2
3
–
2
IC 5
4
Features
• High collector-emitter voltage
(VCEO = 70 V)
• High input-output isolation voltage
(Viso = 5000 Vrms)
• Current Transfer Ratio
(CTR: min. 40% at IF = 10 mA,
VCE = 5 V)
• Response time (tr: typ., 5 µs at
VCC = 10 V, IC = 2 mA, RL = 100 Ω)
• Dual-in-line package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2 approved
• Options available:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bends for surface
mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• System appliances, measuring
instruments
• Signal transmission between
circuits of different potentials and
impedances
• Feedback circuit in power supply
COLLECTOR
EMITTER
4. EMITTER
5. COLLECTOR
6. BASE
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
CNY17-X-000E
7.3 ± 0.5
(0.287)
MODEL
NO. *2
LEAD FREE
A CNY17 -
7.62 ± 0.3
(0.3)
3.5 ± 0.5
(0.138)
6.5 ± 0.5
(0.256)
Y Y WW
DATE
CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
0.5
TYP.
(0.02)
3.3 ± 0.5
(0.13)
2.8 ± 0.5
(0.110)
ANODE
2.54 ± 0.25
(0.1)
0.5 ± 0.1
(0.02)
0.26
(0.010)
7.62 ~ 9.98
CNY17-X-060E
7.3 ± 0.5
(0.287)
MODEL
NO. *2
LEAD FREE
A CNY17- V
7.62 ± 0.3
(0.3)
3.5 ± 0.5
(0.138)
6.5 ± 0.5
(0.256)
Y Y WW
ANODE
DATE
CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
0.5
TYP.
(0.02)
3.3 ± 0.5
(0.13)
2.8 ± 0.5
(0.110)
2.54 ± 0.25
(0.1)
0.5 ± 0.1
(0.02)
0.26
(0.010)
7.62 ~ 9.98
CNY17-X-W00E
7.3 ± 0.5
(0.287)
MODEL
NO. *2
LEAD FREE
A CNY17 -
7.62 ± 0.3
(0.3)
3.5 ± 0.5
(0.138)
6.5 ± 0.5
(0.256)
6.9 ± 0.5
(0.272)
Y Y WW
ANODE
2.3 ± 0.5
(0.09)
2.8 ± 0.5
(0.110)
DATE
CODE *1
2.54 ± 0.25
(0.1)
DIMENSIONS IN MILLIMETERS AND (INCHES)
2
0.5 ± 0.1
(0.02)
0.26
(0.010)
10.16 ± 0.5
(0.4)
CNY17-X-300E
7.3 ± 0.5
(0.287)
MODEL
NO. *2
LEAD FREE
A CNY17 Y Y WW
ANODE
7.62 ± 0.3
(0.3)
0.35 +0.15/-0.10
(0.014)
3.5 ± 0.5
(0.138)
6.5 ± 0.5
(0.256)
1.2 ± 0.1
(0.047)
0.35 ± 0.25
(0.014)
2.54 ± 0.25
(0.1)
1.0 ± 0.25
(0.039)
10.16 ± 0.3
(0.4)
DATE
CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
30 seconds
250°C
Temperature (°C)
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
217°C
200°C
150°C
60 sec
25°C
60 ~ 150 sec
90 sec
Time (sec)
Absolute Maximum Ratings
Storage Temperature, TS
Operating Temperature, TA
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, IF
Reverse Input Voltage, VR
Input Power Dissipation, PI
Collector Current, IC
Collector-Emitter Voltage, VCEO
Emitter-Collector Voltage, VECO
Collector-Base Voltage, VCBO
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%)
3
260°C (Peak Temperature)
–55˚C to +150˚C
–55˚C to +100˚C
260˚C for 10 s
60 mA
6V
100 mW
150 mA
70 V
6V
70 V
150 mW
250 mW
5000 Vrms
60 sec
Electrical Specifications (TA = 25˚C)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
*Current Transfer Ratio CNY17-1
CNY17-2
CNY17-3
CNY17-4
Collector-Emitter Saturation Voltage
Symbol
VF
IR
Ct
ICEO
BVCEO
BVECO
BVCBO
IC
CTR
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
IF – FORWARD CURRENT – mA
60
40
20
-25
0
25
50
75
100 125
TA – AMBIENT TEMPERATURE – °C
Figure 1. Forward current vs. temperature.
4
Test Conditions
IF = 60 mA
VR = 6 V
V = 0, f = 1 MHz
VCE = 10 V
IC = 0.1 mA, IF = 0
IE = 10 µA, IF = 0
IC = 0.1 mA, IF = 0
IF = 10 mA
VCE = 5 V
V
IF = 10 mA, IC = 2.5 mA
tr
tf
Riso
–
–
1 x 1011
5
5
–
10
10
–
µs
µs
Ω
Cf
–
–
2
pF
VCE = 5 V, IC = 10 mA
RL = 100 Ω
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
IC
x 100%
IF
80
0
-55
Max.
1.7
10
100
50
–
–
–
32
80
125
200
320
0.3
PC – COLLECTOR POWER DISSIPATION – mW
* CTR =
Typ.
1.4
–
–
–
–
–
–
–
–
–
–
–
–
Units
V
µA
pF
nA
V
V
V
mA
%
VCE(sat)
Min.
–
–
–
–
70
6
70
4
40
63
100
160
–
200
160
150
100
50
0
-55
-25
0
25
50
75
100 125
TA – AMBIENT TEMPERATURE – °C
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Frequency response.
200
TA = 50°C
TA = 0°C
100
TA = 25°C
TA = -25°C
50
20
10
5
2
0.5
0
1.0
1.5
2.5
2.0
3.0
VCE = 5 V
TA = 25°C
180
160
140
RBE =
120
100
80
60
100 kΩ
40
500 kΩ
20
0
2
0
IF = 10 mA
VCE = 5 V
100
50
0
-55
-25
0
25
50
75
0.16
0.08
0.06
0.04
0.02
tf
2
1
0.05
0.1
0.2
0.5
RL – LOAD RESISTANCE – kΩ
Figure 10. Response time vs. load resistance.
5
25
50
75
100
TA – AMBIENT TEMPERATURE – °C
Figure 8. Collector-emitter saturation
voltage vs. temperature.
VCE(SAT.) – COLLECTOR-EMITTER
SATURATION VOLTAGE – V
RESPONSE TIME – µs
tr
0.5
0.02
0
30
TA = 25°C
5
IC = 0.5 mA
4
IC = 1 mA
3
IC = 2 mA
2
IC = 3 mA
IC = 5 mA
1
0
0
2.5
5.0
7.5
10.0
IF – FORWARD CURRENT – mA
Figure 11. Collector-emitter saturation
voltage vs. forward current.
IF = 20 mA
25
20
IF = 10 mA
15
10
IF = 5 mA
5
IF = 2 mA
0
2
4
8
6
10
10-6
VCE = 10 V
10-7
10-8
10-9
10-10
10-11
10-12
10-13
-30
0
20
40
60
12.5
80
100
TA – AMBIENT TEMPERATURE – °C
Figure 9. Collector dark current vs.
temperature.
6
IF = 10 mA
VCC = 5 V
TA = 25°C
35
Figure 6. Collector current vs. collectoremitter voltage.
0.12
-25
PC (MAX.)
VCE – COLLECTOR-EMITTER VOLTAGE – V
0.10
0
-55
100
Figure 7. Relative current transfer ratio vs.
temperature.
5
50
20
IF = 10 mA
IC = 2.5 mA
0.14
TA – AMBIENT TEMPERATURE – °C
10
10
Figure 5. Current transfer ratio vs. forward
current.
VCE(SAT.) – COLLECTOR-EMITTER
SATURATION VOLTAGE – V
RELATIVE CURRENT TRANSFER RATIO – %
Figure 4. Forward current vs. forward voltage.
150
5
IF – FORWARD CURRENT – mA
VF – FORWARD VOLTAGE – V
TA = 25°C
40 IF = 30 mA
0
ICEO – COLLECTOR DARK CURRENT – A
1
45
200
IC – COLLECTOR CURRENT – mA
TA = 75°C
CTR – CURRENT TRANSFER RATIO – %
IF – FORWARD CURRENT – mA
500
Test Circuit for Response Time
Test Circuit for Frequency Response
VCC
VCC
RL
RD
RD
INPUT
OUTPUT
OUTPUT
~
INPUT
10%
OUTPUT
90%
ts
td
tr
tf
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
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Philippines, Indonesia: (+65) 6755 2044
Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0290EN
October 27, 2004
5989-1736EN
RL
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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