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IRFP460, SiHFP460
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
500
RDS(on) (Ω)
VGS = 10 V
• Repetitive Avalanche Rated
0.27
Available
Qg (Max.) (nC)
210
• Isolated Central Mounting Hole
Qgs (nC)
29
• Fast Switching
110
• Ease of Paralleling
Qgd (nC)
Configuration
Single
RoHS*
COMPLIANT
• Simple Drive Requirements
• Lead (Pb)-free Available
D
TO-247
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247
IRFP460PbF
SiHFP460-E3
IRFP460
SiHFP460
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
VGS at 10 V
TC = 25 °C
TC = 100 °C
SYMBOL
LIMIT
VDS
VGS
500
± 20
20
13
80
2.2
960
20
28
280
3.5
- 55 to + 150
300d
10
1.1
ID
IDM
TC = 25 °C
for 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
www.vishay.com
1
IRFP460, SiHFP460
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.45
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.63
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VGS = ± 20 V
-
-
± 100
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
ID = 12 Ab
-
-
0.27
Ω
Ab
13
-
-
S
-
4200
-
IGSS
IDSS
RDS(on)
gfs
VGS = 10 V
VDS = 50 V, ID = 12
µA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 20 A, VDS = 400 V
see fig. 6 and 13b
-
870
-
-
350
-
-
-
210
-
-
29
Gate-Drain Charge
Qgd
-
-
110
Turn-On Delay Time
td(on)
-
18
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
tr
td(off)
VDD = 250 V, ID = 20 A ,
RG = 4.3 Ω, RD = 13 Ω, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
59
-
-
110
-
-
58
-
-
5.0
-
-
13
-
-
-
20
-
-
80
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 20 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 20A, dI/dt = 100 A/µsb
-
-
1.8
V
-
570
860
ns
-
5.7
8.6
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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2
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS
ID, Drain Current (A)
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
4.5 V
100
ID, Drain Current (A)
Top
150 °C
101
25 °C
20 µs Pulse Width
TC = 25 °C
4
101
100
VDS, Drain-to-Source Voltage (V)
91237_01
ID, Drain Current (A)
4.5 V
20 µs Pulse Width
TC = 150 °C
100
100
91237_02
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
6
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
3.5
RDS(on), Drain-to-Source On Resistance
(Normalized)
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
5
VGS, Gate-to-Source Voltage (V)
91237_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
20 µs Pulse Width
VDS = 50 V
100
3.0
ID = 20 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20
91237_04
0 20
40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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3
IRFP460, SiHFP460
Vishay Siliconix
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
8000
6000
Ciss
4000
Coss
2000
102
ISD, Reverse Drain Current (A)
10 000
150 °C
25 °C
Crss
100
101
VDS, Drain-to-Source Voltage (V)
91237_05
VGS, Gate-to-Source Voltage (V)
0.8
1.0
ID, Drain Current (A)
VDS = 250 V
12
VDS = 100 V
8
2
102
10 µs
5
2
100 µs
10
5
1 ms
4
80
120
160
1
1
200
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
TC = 25 °C
TJ = 150 °C
Single Pulse
2
For test circuit
see figure 13
0
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4
2.0
Operation in this area limited
by RDS(on)
5
16
91237_06
1.8
1.6
103
VDS = 400 V
40
1.4
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 20 A
0
1.2
VSD, Source-to-Drain Voltage (V)
91237_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
VGS = 0 V
101
0.6
0
91237_08
2
5
10
2
5
10 ms
102
2
5
103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
RD
VDS
VGS
16
ID, Drain Current (A)
D.U.T.
RG
20
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
12
Fig. 10a - Switching Time Test Circuit
8
VDS
4
90 %
0
25
50
75
100
125
150
10 %
VGS
TC, Case Temperature (°C)
91237_09
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
1
0 - 0.5
0.1 0.2
0.1
10-2
PDM
0.05
0.02
0.01
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (S)
91237_11
Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
RG
+
-
IAS
V DD
A
VDS
10 V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
IAS
Fig. 12b - Unclamped Inductive Waveforms
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5
IRFP460, SiHFP460
Vishay Siliconix
EAS, Single Pulse Energy (mJ)
2400
ID
8.9 A
13 A
Bottom 20 A
Top
2000
1600
1200
800
400
VDD = 50 V
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
91237_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
QG
10 V
QGS
QGD
VG
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 µF
0.3 µF
+
D.U.T.
-
VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91237.
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1