2 CMOS VLSI Design
... Set number of stages with delay controls to mux – Ex: 0 – 63 stages of delay clk ...
... Set number of stages with delay controls to mux – Ex: 0 – 63 stages of delay clk ...
pptx
... Static RAM (SRAM)—Static Random Access Memory • Essentially just D-Latches plus Tri-State Buffers • A decoder selects which line of memory to access (i.e. word line) • A R/W selector determines the 22 ...
... Static RAM (SRAM)—Static Random Access Memory • Essentially just D-Latches plus Tri-State Buffers • A decoder selects which line of memory to access (i.e. word line) • A R/W selector determines the 22 ...
DISSECTIBLE TRANSFORMER - large
... Again read the output voltages on the secondary coil. They should now more-closely approximate the values as marked near the terminals. If you want to investigate the effect of ‘Air-Gap’ on the induced voltages, remove power, release the clamp, raise the ‘I’ core and insert paper or card of various ...
... Again read the output voltages on the secondary coil. They should now more-closely approximate the values as marked near the terminals. If you want to investigate the effect of ‘Air-Gap’ on the induced voltages, remove power, release the clamp, raise the ‘I’ core and insert paper or card of various ...
Dynamic Random Access Memories (DRAMs)
... Direct Access: The memory cells can be assessed for information transfer from any desired location, i.e. the processing of a word in memory is the same and requires an equal amount of memory. It is the fastest main memory technology. It requires constant power to maintain the stored information, ...
... Direct Access: The memory cells can be assessed for information transfer from any desired location, i.e. the processing of a word in memory is the same and requires an equal amount of memory. It is the fastest main memory technology. It requires constant power to maintain the stored information, ...
Transformer Disassembly and Inductor Winding
... board next to Q3 and Q8. Be sure that wires are soldered in place at these locations on the board. The extra clipped leads from a resistor or capacitor works well for these jumpers, since they do not require any insulation. The fuse, F1, is mounted with a pair of crimp style female spade connectors ...
... board next to Q3 and Q8. Be sure that wires are soldered in place at these locations on the board. The extra clipped leads from a resistor or capacitor works well for these jumpers, since they do not require any insulation. The fuse, F1, is mounted with a pair of crimp style female spade connectors ...
"Magnetics Design 5 - Inductor and Flyback Transformer Design"
... gap. Windings have been known to melt in this vicinity. This problem is most severe with flyback transformers and boost inductors designed for the discontinuous mode, because the flux swings at full load are very large. With filter inductors, or any inductors designed for continuous mode operation, ...
... gap. Windings have been known to melt in this vicinity. This problem is most severe with flyback transformers and boost inductors designed for the discontinuous mode, because the flux swings at full load are very large. With filter inductors, or any inductors designed for continuous mode operation, ...
Supercapacitor Consisting of a Form Core Sandwich with Woven
... higher areal capacitance by around the order of 1 F/cm2 than that without the carbon aerogel, its voltage resistance was smaller than that of a film capacitor. The voltage resistance of a supercapacitor is approximately 1 V, while that of a film capacitor is approximately 10 kV. The extremely high v ...
... higher areal capacitance by around the order of 1 F/cm2 than that without the carbon aerogel, its voltage resistance was smaller than that of a film capacitor. The voltage resistance of a supercapacitor is approximately 1 V, while that of a film capacitor is approximately 10 kV. The extremely high v ...
Capacitive transducers(cont`d)
... area on the fixed plate that is convered, that is, "'shaded" by the moving plate. This type of transducer will give signals proportional to curvilinear displacement or angular velocity A rectilinear capacitance transducer is shown in Fig. (5-b), ...
... area on the fixed plate that is convered, that is, "'shaded" by the moving plate. This type of transducer will give signals proportional to curvilinear displacement or angular velocity A rectilinear capacitance transducer is shown in Fig. (5-b), ...
ppt
... memory cell small • Increasing Waccess, also increases Cbl – Don’t really win by sizing up ...
... memory cell small • Increasing Waccess, also increases Cbl – Don’t really win by sizing up ...
pptx
... Need 32x 1M-to-1 multiplexor h and 32x 20-to-1M decoder How many logic gates/transistors? s2s1s0 ...
... Need 32x 1M-to-1 multiplexor h and 32x 20-to-1M decoder How many logic gates/transistors? s2s1s0 ...
Soft Magnetic Materials
... Soft Magnetic Materials Soft magnetic materials are used extensively in power electronic circuits, as voltage and current transformers, saturable reactors, magnetic amplifiers, inductors, and chokes. These magnetic devices may be required to operate at only 50/60 Hz, or at frequencies down to dc or ...
... Soft Magnetic Materials Soft magnetic materials are used extensively in power electronic circuits, as voltage and current transformers, saturable reactors, magnetic amplifiers, inductors, and chokes. These magnetic devices may be required to operate at only 50/60 Hz, or at frequencies down to dc or ...
Transformer
... then a part of the flux produced in the core will not be linked with the secondary winding. This is called as the leakage flux. In order to avoid this, the primary and secondary windings are mounted on the same limb of the core. ...
... then a part of the flux produced in the core will not be linked with the secondary winding. This is called as the leakage flux. In order to avoid this, the primary and secondary windings are mounted on the same limb of the core. ...
Review on Performance of Static Random Access Memory
... storage. A random-access memory (RAM) device allows data items to be read and written in roughly the same amount of time regardless of the order in which data items are accessed[3]. In contrast, with some of the other direct access data storage media such as hard disks, DVD-RWs and CD-RWs, the time ...
... storage. A random-access memory (RAM) device allows data items to be read and written in roughly the same amount of time regardless of the order in which data items are accessed[3]. In contrast, with some of the other direct access data storage media such as hard disks, DVD-RWs and CD-RWs, the time ...
Y. Han, A. Li, G. Cheung, C.R. Sullivan, and D.J. Perreault, “Evaluation of Magnetic Materials for Very High Frequency Power Applications,” 2008 IEEE Power Electronics Specialists Conference , June 2008, pp. 4270 – 4276
... To minimize the error caused by the inductance of a single turn loop [26], N should be as large as possible. (In our experiments, we often fabricate and measure another inductor with the same core but a high turns number (> 20) specifically to reduce the single turn inductance error and get an accura ...
... To minimize the error caused by the inductance of a single turn loop [26], N should be as large as possible. (In our experiments, we often fabricate and measure another inductor with the same core but a high turns number (> 20) specifically to reduce the single turn inductance error and get an accura ...
Cagalogue Transformer Cores - ArcelorMittal Technotron sro
... Unicore Unicore constitutes a new line of cores of magnetic circuits. The manufacturing technology was developed in 1997 and its aim was to simplify the existing technology and improvement of parameters of electrical machines. Due to advantages of their construction Unicore are apt to replace almost ...
... Unicore Unicore constitutes a new line of cores of magnetic circuits. The manufacturing technology was developed in 1997 and its aim was to simplify the existing technology and improvement of parameters of electrical machines. Due to advantages of their construction Unicore are apt to replace almost ...
Lecture1 Introduction - University of California, Berkeley
... • DDR - Double data rate SDRAM – Uses both rising (positive edge) and falling (negative) edge of clock for data transfer. (typical 100MHz clock with 200 MHz transfer). ...
... • DDR - Double data rate SDRAM – Uses both rising (positive edge) and falling (negative) edge of clock for data transfer. (typical 100MHz clock with 200 MHz transfer). ...
Dynamically Parameterized Architectures for Power Aware Video
... Prototypes: .18u MOSIS of communication interface, ~25K transistors, verification of interface logic and timing ASOC in Education: Circuits, architecture and core design projects ...
... Prototypes: .18u MOSIS of communication interface, ~25K transistors, verification of interface logic and timing ASOC in Education: Circuits, architecture and core design projects ...
BL(1)
... small cells (1 to 3 fets/cell) – so more bits/chip slower – so used for main memories single ended output (output BL only) need sense amps for correct operation not typically compatible with CMOS technology ...
... small cells (1 to 3 fets/cell) – so more bits/chip slower – so used for main memories single ended output (output BL only) need sense amps for correct operation not typically compatible with CMOS technology ...
Lesson 22
... induced in the core causing power loss and (ii) hysteresis effect of the material also causes additional power loss called hysteresis loss. The effect of both the losses will make the core hotter. We must see that these two losses, (together called core loss) are kept to a minimum in order to increa ...
... induced in the core causing power loss and (ii) hysteresis effect of the material also causes additional power loss called hysteresis loss. The effect of both the losses will make the core hotter. We must see that these two losses, (together called core loss) are kept to a minimum in order to increa ...
Magnetic-core memory
Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core.Core uses tiny magnetic toroids (rings), the cores, through which wires are threaded to write and read information. Each core represents one bit of information. The cores can be magnetized in two different ways (clockwise or counterclockwise) and the bit stored in a core is zero or one depending on that core's magnetization direction. The wires are arranged to allow for an individual core to be set to either a one or a zero and for its magnetization to be changed by sending appropriate electric current pulses through selected wires. The process of reading the core causes the core to be reset to a zero, thus erasing it. This is called destructive readout. When not being read or written, the cores maintain the last value they had, even when power is turned off. This makes them nonvolatile.Using smaller cores and wires the memory density of core slowly increased, and by the late 1960s a density of about 32 kilobits per cubic meter was typical. However, reaching this density required extremely careful manufacture, almost always carried out by hand in spite of repeated major efforts to automate the process. The cost declined over this period from about $1 per bit to about 1 cent per bit. The introduction of the first semiconductor memory SRAM chips in the late 1960s began to erode the core market. The first successful DRAM, the Intel 1103 which arrived in quantity in 1972 at 1 cent per bit, marked the beginning of the end of core. Improvements in semiconductor manufacturing led rapid increases in storage and decreases in price that drove core from the market by around 1974.Although core memory is obsolete, any computer memory is still occasionally called ""core""; in particular, a file recording the contents of memory after a system error is usually called a core dump.